2019 is the first year for China's photovoltaic parity access to the Internet. Facing the coming era of affordable Internet access, all links of the photovoltaic industry chain still need continuous technological innovation to further reduce the cost of electricity consumption. At present, photovoltaic silicon growth technology and silicon wafer link are undergoing significant changes.

For monocrystal silicon, on the one hand, high efficiency monocrystal battery technology puts forward higher requirements for monocrystal silicon materials, which need to be further upgraded from high purity, reduction of oxygen and carbon content, optimization of thermal history and other technical directions; on the other hand, monocrystal rod pulling technology is transiting from multiple loading direct pulling (RCZ) to continuous direct pulling (CCZ). CCZ technology can effectively reduce the pulling time, crucible cost and energy consumption of single crystal rod, and the resistivity of crystal rod produced by CCZ is more uniform, narrow distribution and higher quality, which is more suitable for high-efficiency perc and n-type single crystal battery. Ordinary Czochralski single crystal furnace can be upgraded to continuous Czochralski single crystal furnace. Longji Co., Ltd. has officially completed the research and development of CCZ high-efficiency single crystal products and has the capacity of mass production.

Polycrystalline ingot technology is ushering in a new application era - ingot monocrystalline silicon. Ingot single crystal combines the advantages of low cost, low energy consumption, large size and high efficiency and quality of single crystal casting technology, which is an important development direction of silicon crystal manufacturing. Compared with Czochralski single crystal, the resistivity distribution of ingot single crystal is more concentrated, the oxygen content is lower, and it is highly suitable for the production process of perc battery. At the same time, the ingot single crystal also faces the challenges of high dislocation density, single crystal rate, seed crystal cost and material utilization. GCL Poly has successfully launched a new generation of ingot single crystal product, "xinmonocrystal G3", with a production capacity expected to reach 8-10gw in 2019. In 2019, the high efficiency P5 module of atlas ingot began to be shipped to the world on a large scale.

At the wafer end, large size is becoming the industry development trend. With the increase of silicon chip size, the output of battery and module production line can be increased, the production cost per watt can be reduced, the module power and conversion efficiency can be improved, and the photovoltaic industry can enter the 4.0 era. At present, the size of silicon wafer in the market presents diversified specifications, which brings inconvenience to the application and management of the industrial chain. The size standard of silicon wafer is being actively formulated. It is predicted that 2019 will be the first year of 166 size silicon chip development, 158.75 size is expected to become the mainstream size, and the market share of large size silicon chip will exceed 50% in 2020.

The second photovoltaic silicon growth and large-scale silicon wafer technology forum 2019 will be held in Hangzhou on September 19. The conference will discuss the prospect of photovoltaic industry and the market analysis of monocrystalline silicon wafer, the optimization and development prospect of Czochralski single crystal, ingot polycrystalline and ingot single crystal process, the technical advantages and production capacity prospect of continuous Czochralski single crystal, the competitiveness analysis and market application progress of ingot single crystal, the standardization and development trend of silicon wafer size in the era of large-size silicon chip power assisted module 4.0, and the advanced silicon crystal growth device Preparation, high performance auxiliary materials and characterization technology, etc.

Notice of relevant matters is as follows:

1、 Seminar topics:
1. Prospect of photovoltaic industry and market analysis of monocrystalline silicon wafer
2. Supply and demand analysis and development trend of silicon material and silicon chip market
3. Development prospect of single crystal, polycrystalline, ingot single crystal and direct method silicon wafer
4. Performance requirements of high efficiency battery technology for single crystal and polycrystalline silicon materials
5. Process optimization and technology upgrading of Czochralski single crystal and ingot polycrystal
6. Technical advantages and production prospects of continuous Czochralski (CCZ)
7. CCZ demand analysis for granular polysilicon and high performance crucible
8. FBR fluidized bed technology to produce high quality granular silicon
9. Analysis of ingot single crystal competitiveness and market application progress
10. Technology prospect of super high efficiency battery with over 23% mass production of ingot single crystal
11. Technical advantages of direct silicon chip and battery application
12. Silicon crystal growth advanced equipment, high-performance auxiliary materials and characterization technology
13. Safe production and intelligent manufacturing of silicon crystal growth
14. The era of large-scale silicon power module 4.0
Economic analysis of 15.158.75 and 166 size silicon wafers
16. Standardization and development trend of wafer size

2、 Time: September 19, 2019
3、 Location: Hangzhou
4、 Registration time: 16:00-21:00, September 18, 2019
5、 For registration fee and receipt, please contact:
Manager Chen: 021-68726606-109 / 13701609248 (wechat same number)
Joanna,u chen@
Or click the link to fill in the form, and a staff member will contact you at

The convening of this conference will be conducive to the improvement of the comprehensive level of China's photovoltaic technology, key materials and other application fields and the strategic needs of future development, promote the technological progress and development of relevant fields, and have a positive and far-reaching impact on the future development of new energy, new materials and new energy automobile three World War strategic emerging industries.

As the organizer of this conference, Shanghai Yahua consulting company sincerely invites your representative to participate in this conference.  

Conference fee: 3200 yuan / person, 2900 yuan / person for team application (same company ≥ 3 persons); English service fee of 2000 yuan for foreign guests

Note: the fee on the day of the meeting includes: lunch, tea break, dinner, Chinese Conference information, venue tickets, etc., excluding accommodation. The accommodation fee is directly settled with the hotel before check-out. The English service fee includes: English conference information, simultaneous interpretation fee, etc. on the day of the meeting

Advertising expenses
For different plans, please contact the person in charge: Miss Chen 021-68726606-109 / 13701609248 (the same as wechat) or email to Joanna gun@ 
The measure of area: 300m2

• Truename:Manager Chen
• Mobile:13701609248
• E-mail:Joanna_chen@chemweekly.com
• QQ:410192892
• Address:Jinqiao, Pudong, Shanghai

The information on this site comes from the network and related members, and the website has done its duty to review it. Due to the uncontrollability of the process of organizing the exhibition, some of the exhibition information in the station may change the subject matter, Extending or cancelling the event, please exhibitors and visitors must check with each other again before exhibiting! All the exhibitions in this site are not hosted/co-organized or organized, if there are any disputes during the exhibition, please hold the main responsibility of the exhibition organization! QQ Email: 523138820@qq.com WeChat: 523138820 Mobile: 15313206870